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Advanced 1200V IGBTs from STMicroelectronics [News]
posted June 13 2014 11:01.54 by spic0m




ST's new H series 1200V IGBTs have up to 15% lower turn-off losses and up to 30% lower turn-on losses. The saturation voltage (Vce(sat)) down to 2.1V (typical, at nominal collector current and 100°C) ensures minimal overall losses for higher-efficiency operation at switching frequencies above 20kHz.

In addition, these new 1200V IGBTs offer the option of an integrated very fast-recovery anti-parallel diode for optimum performance in hard-switching circuits and minimizing energy losses in circuits with a freewheel diode.

The new IGBTs are also extremely rugged, with latch-up-free operation at up to four times the nominal current, and minimum short-circuit time of 5µs (at 150°C starting junction temperature). The extended maximum operating junction temperature of 175°C helps enhance service lifetime and simplify system cooling. A wide Safe Operating Area (SOA) boosts reliability in applications where high power dissipation is required.

Further advantages of the new devices include excellent EMI (electromagnetic interference) characteristics thanks to a near ideal waveform during switching events, which competing high-frequency devices cannot achieve. A positive temperature coefficient of Vce(sat), with close distribution of parameters from device to device, allows safer parallel operation in high-power applications.

[Link: STMicroelectronics]
 
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